Substrate processing apparatus

ABSTRACT

A substrate processing apparatus includes a partition comprising at least one through-hole, a conduit arranged in the partition through the through-hole, a gas supply unit connected to the conduit, and a low dielectric material provided between a side wall of the through-hole and the conduit.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims the benefit of Korean Patent Application No.10-2016-0170410, filed on Dec. 14, 2016, in the Korean IntellectualProperty Office, the disclosure of which is incorporated herein in itsentirety by reference.

BACKGROUND 1. Field

One or more embodiments relate to a substrate processing apparatus, andmore particularly, to a substrate deposition apparatus capable ofpreventing generation of parasitic plasma.

2. Description of the Related Art

In a process of manufacturing a semiconductor device, as a circuit linewidth decreases, more precise process control has been required. In afilm deposition process that is one of important semiconductorprocesses, various efforts to achieve high film uniformity have beenmade.

One of major factors for uniform film deposition is a gas supply unit. Ashowerhead method is employed for a common gas supply unit. Theshowerhead method has a merit of uniformly supplying a gas onto asubstrate in a coaxial shape.

Plasma is used to secure a relatively fast response speed. The plasmaneeds to be generated uniformly in a reaction space. When the plasma isgenerated in an unnecessary space, a defect may occur in an apparatus.Furthermore, when the plasma is not uniformly distributed on asubstrate, the quality of a film may be deteriorated.

SUMMARY

One or more embodiments include a substrate deposition apparatus whichmay prevent generation of parasitic plasma.

One or more embodiments include a substrate processing apparatus whichmay prevent leakage of plasma power.

Additional aspects will be set forth in part in the description whichfollows and, in part, will be apparent from the description, or may belearned by practice of the presented embodiments.

According to one or more embodiments, a substrate processing apparatusincludes a partition comprising at least one through-hole, a conduitarranged in the partition through the through-hole, a gas supply unitconnected to the conduit, and a low dielectric material provided betweena side wall of the through-hole and the conduit.

The low dielectric material may include air.

At least one path for connecting the air and outside may be formed inthe substrate processing apparatus.

The path may be formed between the partition and the conduit.

The path may be formed in the partition.

The partition may include a protruding portion protruding toward the gassupply unit, and the low dielectric material may contact one sidesurface of the protruding portion.

The partition may include a step portion located in an area where thethrough-hole is formed, the conduit may include a flange, and theconduit may be connected to the partition through a coupling between theflange and the step portion.

A path communicated with outside air may be formed between the stepportion and the flange.

The substrate processing apparatus may further include an insulatingplate arranged between the partition and the gas supply unit.

The substrate processing apparatus may further include a radio frequency(RF) rod connected to the gas supply unit by penetrating through atleast part of the partition and the insulating plate.

The through-hole may have a first diameter in a first region and asecond diameter greater than the first diameter in a lower portion ofthe first region.

A diameter of at least part of the through-hole may continuouslyincrease toward the gas supply unit.

A side section profile of at least part of the through-hole may have abell-like shape.

According to one or more embodiments, a substrate processing apparatusincludes a partition including at least one through-hole, an insulatingconduit arranged in the partition through the through-hole, a gas supplyunit connected to the insulating conduit, an insulating plate arrangedbetween the partition and the gas supply unit, and a radio frequency(RF) rod connected to the gas supply unit by penetrating through theinsulating plate, wherein the partition includes at least one of firstprotruding portion contacting the insulating plate, and at least one ofsecond protruding portion contacting the insulating plate and arrangedbetween the first protruding portion and the insulating conduit, the RFrod is arranged between the first protruding portion and the secondprotruding portion, and an air-filled-space is formed between thepartition and the insulating plate, between a side wall of thethrough-hole and the insulating conduit, and between the firstprotruding portion and the second protruding portion.

The second protruding portion may be continuously formed around theinsulating conduit. The second protruding portion may further include apath. The path may be formed to connect a space between the firstpartition and the second partition and a space between the secondpartition and the insulating conduit. Alternatively, the secondprotruding portion may be discontinuously formed around the insulatingconduit.

According to one or more embodiments, a substrate processing apparatusincludes a partition providing a gas supply channel, a gas supply unitconnected to the gas supply channel, and air between the partition andthe gas supply unit, wherein the partition includes at least one firstprotruding portion protruding toward the gas supply unit, and the aircontacts one side surface of the first protruding portion.

The first protruding portion may be arranged in an area overlapping thegas supply unit.

At least part of the first protruding portion may be arranged in an areathat does not overlap the gas supply unit.

The partition may further include at least one second protruding portionprotruding toward the gas supply unit and arranged between the firstprotruding portion and the gas supply channel, and the air may beprovided between the first protruding portion and the second protrudingportion and between the gas supply channel and the second protrudingportion.

The substrate processing apparatus may further include a radio frequency(RF) rod connected to the gas supply unit and arranged between the firstprotruding portion and the second protruding portion.

The substrate processing apparatus may further include moistureabsorbing member arranged to contact the air.

The second protruding portion may be continuously formed around the gassupply channel. For example, the second protruding portion may furtherinclude a path. The path may be formed to connect a space between thefirst partition and the second partition and a space between the secondpartition and the gas supply channel. Alternatively, the secondprotruding portion may be discontinuously formed around the gas supplychannel.

BRIEF DESCRIPTION OF THE DRAWINGS

These and/or other aspects will become apparent and more readilyappreciated from the following description of the embodiments, taken inconjunction with the accompanying drawings in which:

FIGS. 1 and 2 are schematic cross-sectional views of substrateprocessing apparatuses according to embodiments;

FIGS. 3 and 4 are schematic cross-sectional views of substrateprocessing apparatuses according to other embodiments;

FIGS. 5 and 6 are schematic cross-sectional views of substrateprocessing apparatuses according to other embodiments;

FIG. 7 is a schematic cross-sectional view of a substrate processingapparatus according to an embodiment;

FIGS. 8 and 9 are schematic cross-sectional views of modified examplesof the embodiment of FIG. 7;

FIG. 10 is a schematic cross-sectional view of a substrate processingapparatus according to an embodiment;

FIG. 11 is a schematic cross-sectional view of a substrate processingapparatus according to an embodiment;

FIGS. 12 and 13 are schematic cross-sectional views of substrateprocessing apparatuses according to other embodiments;

FIG. 14 is an enlarged cross-sectional view of a discharge portion ofthe substrate processing apparatus;

FIGS. 15 to 17 are schematic perspective views of reactors according toother embodiments and substrate processing apparatuses including thereactors;

FIGS. 18 and 19 schematically illustrate structures of reactorsaccording to other embodiments;

FIGS. 20 and 21 schematically illustrate structures of back platesaccording to other embodiments;

FIGS. 22 to 24 are, respectively, a perspective view, a top view, and abottom view of a gas channel included in the gas supply unit, accordingto an embodiment;

FIGS. 25 and 26 illustrate various embodiments of a fourth through-holeand a fifth through-hole penetrating through a back plate and a gaschannel; and

FIGS. 27 and 28 are graphs showing a thickness of a SiO₂ film depositedon a substrate by a plasma-enhanced atomic layer deposition (PEALD)method in a reactor according to an embodiment.

DETAILED DESCRIPTION

Reference will now be made in detail to embodiments, examples of whichare illustrated in the accompanying drawings, wherein like referencenumerals refer to like elements throughout. In this regard, the presentembodiments may have different forms and should not be construed asbeing limited to the descriptions set forth herein. Accordingly, theembodiments are merely described below, by referring to the figures, toexplain aspects of the present description. As used herein, the term“and/or” includes any and all combinations of one or more of theassociated listed items. Expressions such as “at least one of,” whenpreceding a list of elements, modify the entire list of elements and donot modify the individual elements of the list.

Embodiments are provided to further completely explain the presentinventive concept to one of ordinary skill in the art to which thepresent inventive concept pertains. However, the present inventiveconcept is not limited thereto and it will be understood that variouschanges in form and details may be made therein without departing fromthe spirit and scope of the following claims. That is, descriptions onparticular structures or functions may be presented merely forexplaining embodiments of the present inventive concept.

Terms used in the present specification are used for explaining aspecific embodiment, not for limiting the present inventive concept.Thus, the expression of singularity in the present specificationincludes the expression of plurality unless clearly specified otherwisein context. Also, terms such as “comprise” and/or “comprising” may beconstrued to denote a certain characteristic, number, step, operation,constituent element, or a combination thereof, but may not be construedto exclude the existence of or a possibility of addition of one or moreother characteristics, numbers, steps, operations, constituent elements,or combinations thereof. As used in the present specification, the term“and/or” includes any one of listed items and all of at least onecombination of the items.

In the present specification, terms such as “first” and “second” areused herein merely to describe a variety of members, parts, areas,layers, and/or portions, but the constituent elements are not limited bythe terms. It is obvious that the members, parts, areas, layers, and/orportions are not limited by the terms. The terms are used only for thepurpose of distinguishing one constituent element from anotherconstituent element. Thus, without departing from the right scope of thepresent inventive concept, a first member, part, area, layer, or portionmay refer to a second member, part, area, layer, or portion.

Hereinafter, the embodiments of the present inventive concept aredescribed in detail with reference to the accompanying drawings. In thedrawings, the illustrated shapes may be modified according to, forexample, manufacturing technology and/or tolerance. Thus, the embodimentof the present inventive concept may not be construed to be limited to aparticular shape of a part described in the present specification andmay include a change in the shape generated during manufacturing, forexample.

FIGS. 1 and 2 are schematic cross-sectional views of substrateprocessing apparatuses according to embodiments.

Referring to FIGS. 1 and 2, each substrate processing apparatus mayinclude a partition 110, a conduit 120, a gas supply unit 130, a radiofrequency (RF) rod 140, and a substrate support unit 150. Although anexample of the substrate processing apparatus described in the presentspecification may include a deposition apparatus for a semiconductor ora display substrate, the present disclosure is not limited thereto. Thesubstrate processing apparatus may be any apparatus needed to performdeposition of a material for forming a film, or may refer to anapparatus for uniformly supplying a source material for etching orpolishing of a material. In the following description, for convenienceof explanation, it is assumed that a substrate processing apparatus is asemiconductor thin-film deposition apparatus.

The partition 110 may be a constituent element of a reactor. In otherwords, a reaction space 160 for processing, for example, deposition,etching, or polishing, of a substrate may be formed by the structure ofthe partition. For example, the partition 110 may include at least onethrough-hole TH1. A gas supply channel may be provided through thethrough-hole TH1 of the partition 110.

The conduit 120 may be arranged in the partition 110 through thethrough-hole TH1. The conduit 120 may be the gas supply channel of thesubstrate processing apparatus. When a deposition apparatus is an atomiclayer deposition apparatus, a source gas, a purge gas, and/or a reactivegas may be supplied through the conduit 120. The conduit 120 may includean insulating material. In some embodiments, the conduit 120 may be aninsulating conduit formed of an insulating material.

The gas supply unit 130 may be connected to the conduit 120 that is thegas supply channel. The gas supply unit 130 may be fixed to the reactor.For example, the gas supply unit 130 may be fixed to the partition 110through a fixed member (not shown). The gas supply unit 130 may beconfigured to supply a gas toward a target subject S in a reaction space160. For example, the gas supply unit 130 may be a showerhead assemblyconfigured to uniformly supply a gas.

The RF rod 140 may be connected to the gas supply unit 130 bypenetrating at least part of the partition 110. The RF rod 140 may beconnected to an external plasma supply unit (not shown). Although FIG. 2illustrates two RF rods 140, the present disclosure is not limitedthereto, and more than two RF rods may be installed to improveuniformity of plasma power supplied to the reaction space 160.Furthermore, although it is not illustrated in the drawings, to cut offthe electrical connection between the RF rod 140 and the partition 110,an insulating body may be provided between the RF rod 140 and thepartition 110.

The gas supply unit 130 may be a conductive body and may be used as anelectrode to generate plasma. In other words, as the gas supply unit 130is connected to the RF rod 140, the gas supply unit 130 may serve as anelectrode to generate plasma. The gas supply unit 130 employing theabove method of using the gas supply unit 130 as an electrode may bereferred to as the gas supply electrode in the following description.

The substrate support unit 150 may be configured to provide an area inwhich the target subject S such as a semiconductor or display substrateis accommodated. Furthermore, the substrate support unit 150 may beconfigured to contact a lower surface of the partition 110. For example,the substrate support unit 150 may be supported by a support portion(not shown) capable of performing vertical and rotational motions. Asthe substrate support unit 150 is separated from the partition 110 or incontact with the partition 110 by the motions of the support portion,the reaction space 160 may be opened or closed. Furthermore, thesubstrate support unit 150 may be a conductive body and may be used asan electrode to generate plasma, that is, a counter electrode of the gassupply electrode.

An empty space 170 may be formed between the conduit 120 and a side wallof the through-hole TH1 of the partition 110. The empty space 170 may befilled with a low dielectric material. In an example, the low dielectricmaterial may include air. Furthermore, the low dielectric material mayinclude, in addition to the air, any one selected from among hydrogensilsesquioxane (HSQ), methyl silsesquioxane (MSQ), amorphousfluoro-carbon (a-C:F), fluorinated silicon oxide (SiOF), siliconoxycarbide (SiOC), and porous SiO₂, and a combination thereof.

The empty space 170 or the low dielectric material, for example, air,may prevent generation of parasitic plasma. For example, when a voltageis applied to gas supply electrode 130 to generate plasma, parasiticplasma may be generated in a space other than a space between the gassupply electrode 130 and a susceptor electrode 150. The parasitic plasmamay be generated, for example, in a space between the partition 110 andthe gas supply electrode 130 or in a space between the partition 110 andthe conduit 120. The empty space 170 or the low dielectric material, forexample, air, filling the empty space 170 may prevent the generation ofthe parasitic plasma.

Accordingly, according to embodiments of the present inventive concept,contaminated particles generated by the parasitic plasma, andcontamination of the inside of a chamber and deterioration of thequality of process outcomes according to the contaminated particles, maybe addressed.

The partition 110 may include a protrusion 180 protruding toward the gassupply unit 130. At least part of the protrusion 180 may be arranged inan area that overlaps the gas supply unit 130 or an area that does notoverlap the gas supply unit 130. In some embodiments, at least part ofthe protrusion 180 may be arranged in an area that does not overlap anarea C of the substrate support unit 150 in which the target subject Sis accommodated. In some embodiments, the protrusion 180 may notentirely overlap the area C of the substrate support unit 150 in whichthe target subject S is accommodated.

One side surface of the protrusion 180 may contact the low dielectricmaterial. In detail, the protrusion 180 may contact the gas supply unit130 (or an insulating plate). Of side walls perpendicular to the contactsurface, a side wall facing the gas supply channel, for example, theconduit 120, may contact the low dielectric material, for example, air.

To implement the side wall of the protrusion 180, the through-hole TH1of the partition 110 may have a first diameter in a first region, andmay have a second diameter greater than the first diameter in a secondregion under the first region. In other words, a first portion of thethrough-hole TH1 arranged in the first region may have the firstdiameter to provide the gas supply channel or accommodate the conduit120, whereas a second portion of the through-hole TH1 arranged in thesecond region may have the second diameter greater than the firstdiameter to provide the protrusion 180.

When the low dielectric material is air, at least one path connectingthe air and the outside may be formed in the substrate processingapparatus. The path may be a path P1 formed between the partition 110and the conduit 120. Furthermore, the path may be a path P2 formedbetween the RF rod 140 and the partition 110, or a path (not shown)formed in the partition 110.

FIGS. 3 and 4 are schematic cross-sectional views of substrateprocessing apparatuses according to other embodiments. The substrateprocessing apparatus according to the present embodiment may be modifiedexamples of the substrate processing apparatuses according to theabove-described embodiments. Redundant descriptions between theembodiments are omitted in the following description.

Referring to FIGS. 3 and 4, the substrate processing apparatus accordingto the present embodiment may include the partition 110, the gas supplyunit 130, the RF rod 140, and the substrate support unit 150. In thepresent embodiment, the partition 110 of the substrate processingapparatus may be configured to provide a gas supply channel 115. In someembodiments, a conduit may be provided in the gas supply channel 115.

The partition 110 of the substrate processing apparatus may furtherinclude a protrusion 185, in addition to the protrusion 180 describedabove. The protrusion 185, like the protrusion 180, may protrude towardthe gas supply unit 130. Furthermore, the low dielectric material thatmay fill the empty space may contact one side surface of the protrusion180 and one side surface of the protrusion 185.

In the following description, in order to distinguish the protrusions180 and 185 from each other, the protrusion 180 may be referred to asthe first protrusion, and the protrusion 185 may be referred to as thesecond protrusion. However, the above indication is merely forconvenience of explanation and the first protrusion defined in claimsmay refer to the protrusion 180 or the protrusion 185.

Contrary to the first protrusion 180, the second protrusion 185 isentirely arranged in an area overlapping the gas supply unit 130.Furthermore, the second protrusion 185 is entirely arranged in an areaoverlapping the area C of the substrate support unit 150 in which thetarget subject S is accommodated. In some embodiments, the protrusion180 may contact the gas supply unit 130 (or an insulating plate) and,among the side walls perpendicular to the contact surface, a side wallin an opposing direction to the gas supply channel 115, for example, theconduit 120, may contact the low dielectric material, for example, air.

Referring to FIG. 4, at least part of the partition 110 of the substrateprocessing apparatus may further include a through-hole TH2 toaccommodate the RF rod 140. The RF rod 140 may be connected to the gassupply unit 130 via the through-hole TH2, A support member 145 may bearranged between the partition 110 and the RF rod 140. For example, thesupport member 145 may include an insulating body. In some embodiments,the support member 145 may be implemented in the form of a flange. Thesupport member 145 may prevent plasma power supplied by the RF rod 140from leaking through the partition 110.

In the embodiment of FIG. 4, one side surface of the support member 145may be exposed to the empty space 170. In some embodiments, one sidesurface of the support member 145 may contact the low dielectricmaterial.

In some embodiments, at least part of an exposed side surface of thesupport member 145 may be removed. Accordingly, one side surface of theRF rod 140 may be exposed to the empty space 170. In other words, thesupport member 145 may be arranged only between the partition 110 andthe RF rod 140, and may not be formed in a lower portion of the RF rod140. Accordingly, similar to the embodiment illustrated in FIG. 2, thelow dielectric material may contact one side surface of the RF rod 140.A permittivity of the low dielectric material may be lower than thepermittivity of the support member 145, and thus a parasitic plasmablocking effect may be additionally improved through the abovestructure.

In some embodiments, as described above, the air that is the lowdielectric material filling the empty space 170 may be communicated withthe outside atmosphere through the path P2, and instead of the path P2or in addition to the path P2, a path P2′ formed between the supportmember 145 and the partition 110 may be communicated with the outsideatmosphere.

FIGS. 5 and 6 are schematic cross-sectional views of substrateprocessing apparatuses according to other embodiments. The substrateprocessing apparatus according to the present embodiment may be modifiedexamples of the substrate processing apparatuses according to theabove-described embodiments. Redundant descriptions between theembodiments are omitted in the following description.

Referring to FIG. 5, the substrate processing apparatus according to thepresent embodiment may further include an insulating plate 190. Theinsulating plate 190 may be arranged between the partition 110 and thegas supply unit 130. The RF rod 140 may be connected to the gas supplyunit 130 by penetrating through at least part of the partition 110 ofthe substrate processing apparatus and the insulating plate 190.Although it is not illustrated in the drawings, a support member may bearranged between the RF rod 140 and the partition 110.

Referring to FIG. 6, an upper surface and one side surface of theinsulating plate 190 may contact the low dielectric material. In otherwords, a through-hole of the insulating plate 190 may be configured tohave a diameter greater than the diameter of the RF rod 140 or a sum ofthe diameters of the RF rod 140 and the support member. Accordingly, theair, that is, the low dielectric material, filling the empty space 170of the substrate processing apparatus may contact not only the uppersurface of the insulating plate 190, but also the side surface thereof.Furthermore, the low dielectric material may contact the upper surfaceof the gas supply electrode 130.

FIG. 7 is a schematic cross-sectional view of a substrate processingapparatus according to an embodiment. The substrate processing apparatusaccording to the present embodiment may be modified examples of thesubstrate processing apparatuses according to the above-describedembodiments. Redundant descriptions between the embodiments are omittedin the following description.

Referring to FIG. 7, the through-hole TH1 of the partition 110 may havea third diameter between the first diameter and the second diameter in athird region R3 between a first region R1 and a second region R2. Thelow dielectric material may be arranged between a side wall of thethrough-hole TH1 having the second diameter and the conduit 120 andbetween a side wall of the through-hole TH1 having the third diameterand the conduit 120. By filling the space between the conduit 120 andthe through-hole TH1 having the second diameter and the third diameterwith the low dielectric material such as the outside atmosphere (air),parasitic plasma may be prevented from being generated in the emptyspace 170.

FIG. 8 is a schematic cross-sectional view of a modified example of theembodiment of FIG. 7, in which the diameter of at least part of thethrough-hole TH1, for example, the third diameter of the third regionR3, continuously increases toward the gas supply unit 130. The shape isto secure the volume of an air insulating layer formed in the substrateprocessing apparatus as large as possible. Accordingly, provided thatmechanical stability is guaranteed, an inclination that the thirddiameter increases may be designed to be relatively large.

FIG. 9 is a schematic cross-sectional view of a modified example of theembodiment of FIG. 8, in which the conduit 120 of the substrateprocessing apparatus includes a flange F and the partition 110 includesa step portion 210. The step portion 210 may be located in an area wherethe through-hole TH1 is formed, and may extend protruding from thepartition 110. The step portion 210 may extend in a horizontal directionor an inclined direction to support the flange F of the conduit 120.

The conduit 120 may be connected to the partition 110 through amechanical coupling between the flange F and the step portion 210. Aseparated sealing member such as an O-ring may not be inserted betweenthe flange F of the conduit 120 and the step portion 210, and thus apath P3 communicating with the outside atmosphere may be formed betweenthe step portion 210 and the flange F. Air circulation between the airinsulating layer of the empty space 170 and the outside atmosphere maybe performed through the path P3. Accordingly, in spite of a temperaturechange according to a process progress, pressure in an air-filled spacemay be appropriately maintained.

FIG. 10 is a schematic cross-sectional view of a substrate processingapparatus according to an embodiment. The substrate processing apparatusaccording to the present embodiment may be modified examples of thesubstrate processing apparatuses according to the above-describedembodiments. Redundant descriptions between the embodiments are omittedin the following description.

Referring to FIG. 10, a side section profile of at least part of thethrough-hole TH1 of the partition 110 may have a bell-like shape. Theprofile of a bell-like shape may be advantageous in that the weight ofthe partition 110 may be uniformly distributed, mechanical stability ofthe substrate processing apparatus may be secured, and the volume of theair insulating layer formed in the substrate processing apparatus may besecured as large as possible.

A gap G may be formed between the step portion 210 and the flange F ofthe conduit 120. The gap G is provided to increase the volume of the airinsulating layer, that is, to minimize a contact area between the flangeF and the partition 110 that is a metal material. In order to form thegap G, the width of the step portion 210 may be a size to place theflange F of the conduit 120 on the step portion 210 without slipping,that is, a size enough to provide the mechanical coupling between theflange F of the conduit 120 and the partition 110. For example, a lengthof the flange F extending and protruding from the conduit 120 may begreater than a length of the step portion 210 extending and protrudingfrom the partition 110.

The partition 110 may further include a third protrusion 187 in additionto the first protrusion 180. The third protrusion 187 may be arrangedbetween the first protrusion 180 and the gas supply channel like theconduit 120. The third protrusion 187 may be continuously formed aroundthe conduit 120 or a plurality of third protrusion 187 may be formeddiscontinuously at a certain interval. The third protrusion 187, likethe first protrusion 180, may protrude toward the gas supply unit 130.Furthermore, the low dielectric material may contact at least one sidesurface of the third protrusion 187. For example, when the lowdielectric material is air, the air may be arranged between the firstprotrusion portion 180 and the third protrusion 187 and between theconduit 120 and the third protrusion 187.

In some embodiments, the third protrusion 187 may be continuouslyformed, and a path P4 may be formed such that the air between the firstprotrusion 180 and the third protrusion 187 and the air between theconduit 120 and the third protrusion 187 may be communicated with eachother. Although in the drawings the path P4 is formed in the thirdprotrusion 187, the path P4 may be formed by forming a path in a surfaceof the third protrusion 187 contacting the insulating plate 190, withoutforming a separate through-hole.

For example, the third protrusion 187 may be discontinuously formed. Dueto the structure of the third protrusion 187 that is discontinuouslyformed, a groove may be formed between the third protrusions 187, andthe space between the first protrusion 180 and the third protrusion 187and the space between the third protrusion 187 and the conduit 120 maybe connected by the groove. Furthermore, a part, for example, an upperportion, of the third protrusion 187 is continuously formed, and anotherpart, for example, a lower portion, of the third protrusion 187 may beformed discontinuously.

In some embodiments, by not arranging a separate member such as anO-ring between the third protrusion 187 and the insulating plate 190,the path P4 may be formed between the third protrusion 187 and theinsulating plate 190. In other words, the path P4 may be a space in asurface contact between the third protrusion 187 and the insulatingplate 190.

By arranging the third protrusion 187 between the gas supply channel 115and first protrusion 180, the mechanical stability of the partition 110having the empty space 170 may be reinforced. In some embodiments, theRF rod 140 may be arranged between the first protrusion 180 and thethird protrusion 187, and the mechanical stability may be additionallyreinforced by the above arrangement. In other words, the weight of theupper portion of the partition 110 may be mechanically distributed byfirst protrusion 180, the RF rod 140, and the third protrusion 187.

Referring to FIG. 10, the substrate processing apparatus may include thefollowing elements of:

-   -   the partition 110 including at least one through-hole TH1;    -   the (insulating) conduit 120 arranged in the partition 110        through the through-hole TH1;    -   the gas supply unit 130 connected to the (insulating) conduit        120;    -   the insulating plate 190 arranged between the partition 110 and        the gas supply unit 130; and    -   the RF rod 140 connected to the gas supply unit 130 by        penetrating through the insulating plate 190.

The partition 110 of the substrate processing apparatus may include thefollowing elements of:

-   -   at least one first protrusion 180 contacting the insulating        plate 190; and    -   at least one third protrusion 187 contacting the insulating        plate 190 and arranged between the first protrusion 180 and the        (insulating) conduit 120.

Furthermore, the RF rod 140 may be arranged between the first protrusion180 and the third protrusion 187. Furthermore, the air-filled space maybe formed between the partition 110 and the insulating plate 190,between the side wall of the through-hole TH1 and the insulating conduit120, and between the first protrusion 180 and the third protrusion 187.

FIG. 11 is a schematic cross-sectional view of a substrate processingapparatus according to an embodiment. The substrate processing apparatusaccording to the present embodiment may be modified examples of thesubstrate processing apparatuses according to the above-describedembodiments. Redundant descriptions between the embodiments are omittedin the following description.

Referring to FIG. 11, the substrate processing apparatus according tothe present embodiment may include a moisture absorbing member 220arranged to contact the air. As the temperature is changed during theprocess in the substrate processing apparatus, a condensation phenomenonof a vapor component in the air may occur. The moisture absorbing member220 contacting the air may remove the vapor component and moisture.Accordingly, permittivity of the air-filled space may be maintained in alow state.

The moisture absorbing member 220 may be arranged on the partition 110as illustrated in FIG. 11 or may be embedded in the partition 110.Furthermore, the moisture absorbing member 220 may be arranged tocontact the air on the insulating plate 190 or in the insulating plate190.

In some embodiments, one side surface of the insulating plate 190 maycontact the low dielectric material, and a gap may be formed between theinsulating plate 190 and the conduit 120. In other words, thethrough-hole of the insulating plate 190 may be configured to have adiameter greater than the diameter of the conduit 120. Accordingly, theair filling the empty space 170 of the substrate processing apparatusmay contact not only the upper surface of the insulating plate 190, butalso the side surface thereof. Furthermore, the low dielectric materialmay contact the upper surface of the gas supply electrode 130.

FIGS. 12 and 13 are schematic cross-sectional views of substrateprocessing apparatuses according to other embodiments. The substrateprocessing apparatus according to the present embodiment may be modifiedexamples of the substrate processing apparatuses according to theabove-described embodiments. Redundant descriptions between theembodiments are omitted in the following description.

Referring to FIG. 12, in a reactor 1, a reaction space 18 is formed as areactor wall 2 and a susceptor 25 perform face-contact and face-sealingwith each other. A substrate is mounted on the susceptor 25 and a lowerportion of the susceptor 25 is connected to a device (not shown) capableof ascending/descending to load/unload the substrate.

An inner space of the reactor wall 2 may be divided by a first partition5 into a first region 3 and a second region 4. The first region 3 andthe second region 4 respectively correspond to an upper region and alower region of the reactor 1. The first region 3 may be divided by asecond partition 6 into a third region 8 and a fourth region 13.

Furthermore, the first region 3 may be divided by a third partition 7into the fourth region 13 and a fifth region 14 In other words, as thethird partition 7 is arranged between the reactor wall 2 and the secondpartition 6, the fourth region 13 and the fifth region 14 may be formed.

A first through-hole 9 may be formed in the third region 8. The firstthrough-hole 9 penetrates through the first partition 5 and connects thethird region 8 that is an upper space of the reactor 1 and the secondregion 4 that is a lower space of the reactor 1. A first step 15 isformed between the first through-hole 9 and the third region 8.

A sixth region 17 is formed between the second region 4 and the firstpartition 5. The width of the first through-hole 9 penetrating throughthe third region 8 gradually increases toward the sixth region 17. Aspace of the first through-hole 9 that increases toward the sixth region17 may be filled with external air. The external air serves as aninsulator during a plasma process, and thus generation of parasiticplasma in the space may be prevented. Furthermore, the sixth region 17may further include a fourth partition 19, and the fourth partition 19may support a back plate 20.

A gas inlet portion is inserted in the first through-hole 9. The gasinlet portion may include a first gas inlet 6 and a flange 27, and mayfurther include a first gas supply channel 28 penetrating through theinside of the gas inlet portion. The first gas supply channel 28penetrates through the first gas inlet 6 and the flange 27 and extendsto the second region 4. A sealing member such as an O-ring may beinserted in a coupling surface between the first gas inlet 6 and theflange 27, and thus the first gas supply channel 28 may be isolated fromthe external air. A first gas supply path 29 and a second gas supplypath 30 are connected to the first gas inlet 26 to supply a gas used forprocessing a substrate. For example, a source gas, a reactive gas, and apurge gas used for an atomic layer deposition process are supplied tothe reaction space 18 via the first gas supply path 29, the second gassupply path 30, and the first gas supply channel 28. The flange 27 maybe formed of an insulator and may prevent leakage of plasma power duringthe plasma process.

The reactor 1 may further include a second through-hole 10 thatpenetrates through one surface of the third partition 7. The secondthrough-hole 10 is connected to the second region 4 by sequentiallypenetrating through the third partition 7 and the first partition 5. Anupper portion of the second through-hole 10 is coupled to a second gasinlet 31. A sealing member such as an O-ring is inserted in a couplingsurface between the second through-hole 10 and the second gas inlet 31,and thus intrusion of the external air may be prevented. The source gas,the reactive gas, or the purge gas may be supplied through the secondgas inlet 31 and the second through-hole 10. As described above, thesecond through-hole 10 may be plurally provided.

The back plate 20, a gas channel 21, and a gas supply plate 22 may besequentially arranged between the first partition 5 and the reactionspace 18. The gas supply plate 22 and the gas channel 21 may be coupledby using a coupling member. The gas channel 21 and the first partition 5may be coupled by using another coupling member.

For example, the gas channel 21 and the first partition 5 may be coupledthrough the back plate 20. As a result, the back plate 20, the gaschannel 21, and the gas supply plate 22 may be sequentially stackedabove the fourth partition 19 protruding from the first partition 5. Thegas supply plate 22 may include a plurality of holes for supplying a gasto a substrate (not shown) in the reaction space 18. For example, a gassupply unit including the gas channel 21 and the gas supply plate 22 maybe a showerhead, and in another example, the gas supply unit may be adevice for uniformly supplying a material for etching or polishing anobject.

A gas flow channel 24 is formed between the gas channel 21 and the gassupply plate 22. A gas supplied through the first gas supply channel 28may be uniformly supplied to the gas supply plate 22. A width of the gasflow channel 24 may gradually decrease from a center portion toward aperipheral portion thereof.

A third through-hole 23 may be formed in the back plate 20 and onesurface of the gas channel 21. A second step 16 may be formed betweenthe back plate 20, the gas channel 21, and the third through-hole 23.According to the present inventive concept, the third through-hole 23may penetrate through center portions of the back plate 20 and the gaschannel 21, and the flange 27 of the gas inlet portion may be insertedin the first step 15 and to the second step 16.

A sealing member such as an O-ring may be inserted between the flange 27and the second step 16, between the first partition 5 and the back plate20, and/or between the back plate 20 and the gas channel 21.Accordingly, isolation from the external air may be obtained.

The reactor 1 may further include a fourth through-hole 11 penetratingthrough one surface of the back plate 20, and a fifth through-hole 12penetrating through one surface of the gas channel 21. The fourththrough-hole 11 and the fifth through-hole 12 may be connected to thesecond through-hole 10. Accordingly, the gas supplied through the secondthrough-hole 10 is supplied to the gas flow channel 24.

The fifth through-hole 12 may penetrate through the gas supply plate 22in a perpendicular direction, or may penetrate through the gas channel21 in an inclined direction as illustrated in FIG. 12. Furthermore, thepenetration direction may lead toward the inside of the gas flow channel24 or the outside thereof. Furthermore, the fifth through-hole 12 may bearranged between the center and the edge of the gas flow channel 24, orarranged spaced apart from the edge. Alternatively, the position of thefifth through-hole 12 may be determined to correspond to the position ofa patterned structure having a large specific surface area of thesubstrate to be processed.

The fourth through-hole 11 and/or the fifth through-hole 12 may bespaced apart a certain distance from the center portions of the backplate 20 and the gas channel 21 and may form a plurality ofthrough-holes in a horizontal direction. Alternatively, the fourththrough-hole 11 and/or the fifth through-hole 12 may form a plurality ofthrough-holes in a vertical direction while mainlining a certaindistance toward the center portions of the back plate 20 and the gaschannel 21. In the fourth through-hole 11 and/or the fifth through-hole12, the interval between the through-holes may be adjusted according toa desired process.

A buffer space 38 may be further formed between the second through-hole10 and the fourth through-hole 11. The buffer space 38 may retain thegas supplied through the second through-hole 10 so to be uniformlysupplied to the fourth through-hole 11. In some embodiments, the bufferspace 38 may be formed between the fourth through-hole 11 and the fifththrough-hole 12.

A first discharge portion 32 is formed in the reactor wall 2 of thereactor 1. The first discharge portion 32 may include a first dischargehole 33 and a first discharge channel 34. The first discharge portion 32is connected to the fifth region 14 via the first discharge hole 33penetrating through the first partition 5.

An upper portion of the fifth region 14 may be coupled to a dischargepath cover 36, forming a discharge path. A sealing member such as anO-ring is inserted in a coupling surface between the fifth region 14 andthe discharge path cover 36, thereby isolating the discharge path fromthe external air. Furthermore, one surface of the discharge path cover36 may include a gas outlet 35. The gas outlet 35 may be connected to adischarge pump (not shown) to discharge the gas.

An upper portion of the fourth region 13 of the reactor 1 may be coupledto an upper cover 37 for safety. The upper cover 37 may protect an RFdistribution plate 39 from the outside.

FIG. 13 is a cross-sectional view of the reactor 1 viewed in a differentdirection. Referring to FIG. 13, in addition to the gas supply channel28 of FIG. 12, at least one sixth through-hole 43 connected to thesecond region 4 by penetrating through another surface of the firstpartition 5 may be formed in the first partition 5 of the reactor 1. Thesixth through-hole 43 may be arranged between the second partition 6 andthe third partition 7.

A coupling member 40 may be inserted in the sixth through-hole 43, andthus the gas channel 21 and the first partition 5 may be mechanicallycoupled to each other by the coupling member 40. The back plate 20 mayinclude a hole in one surface thereof, through which the coupling member40 passes. The back plate 20 with the gas channel 21 may be mechanicallycoupled to the first partition 5. The coupling member 40 may be aconductive body and may be a screw.

A support member 41 is inserted around the coupling member 40, and thesupport member 41 is formed of an insulating body. Accordingly, thecoupling member 40 and the first partition 5 may be electricallyinsulated from each other by the support member 41, and thus the leakageof plasma power during the plasma process may be prevented.

The gas channel 21 and the gas supply plate 22 may be formed of aconductive body. Accordingly, the gas channel 21 and the gas supplyplate 22 may serve as an electrode to transfer the plasma power duringthe plasma process plasma.

The flange 27, the back plate 20, and the support member 41 may beformed of an insulating body. Accordingly, the plasma power may beprevented from being leaked through the reactor wall 2 via the firstpartition 5. Furthermore, by filling the first through-hole 9 and thesixth region 17 around the flange 27 with the external air, generationof parasitic plasma in the space may be prevented.

The gas channel 21 and the gas supply plate 22 arranged in a lowerregion (the second region 4) may be coupled to each other by a separatecoupling member 42. The coupling member 42 may be formed of a conductivebody and may be a screw. In some embodiments, the gas channel 21 and thegas supply plate 22 included in gas supply unit may be integrallyformed.

FIG. 14 is an enlarged cross-sectional view of a discharge portion ofthe substrate processing apparatus. Referring to FIG. 14, the dischargeportion may include the first discharge portion 2 and a second dischargeportion 44. The first discharge portion 32 may include the firstdischarge hole 33 and the first discharge channel 34. The seconddischarge portion 44 may include a second discharge hole 45 and a seconddischarge channel 46. The first and second discharge holes 33 and 45 maypenetrate through the first partition 5. Furthermore, the first andsecond discharge holes 33 and 45 may connect the discharge path, thatis, the fifth region 14, and the discharge channels 34 and 46.

In the reaction space 18, the residual gas left after a chemicalreaction with the substrate is discharged through the first and seconddischarge portions 32 and 44. Most residual gas may flow to a region “A”via a discharge gap 48. Then, the residual gas in the region “A” maypass through the first discharge portion 32 and may be discharged to thefifth region 14 that is a discharge path.

The gas confined to a region “B” that is a blind spot next to the gaschannel and the gas supply plate may be discharged to the fifth region14 that is a discharge path through the second discharge portion 44. Thediameters of the first discharge hole 33 and the second discharge hole45 may be identical to or different from the diameters of the firstdischarge channel 34 and the second discharge channel 46, respectively.By appropriately adjusting the ratio of the diameters of the firstdischarge hole 33, the second discharge hole 45, the first dischargechannel 34, and/or second discharge channel 46, discharge efficiency ataround the edge portion of the substrate may be controlled and theuniformity of a film may be adjusted accordingly. Furthermore, byadjusting the size of the discharge gap 48, the discharge efficiency andthe uniformity of a film may be controlled.

FIGS. 15 to 17 are schematic perspective views of reactors according toother embodiments and substrate processing apparatuses including thereactors. The substrate processing apparatus according to the presentembodiment may be modified examples of the substrate processingapparatuses according to the above-described embodiments. Redundantdescriptions between the embodiments are omitted in the followingdescription.

Referring to FIG. 15, the reactor according to the present embodimentmay further include a protection cover 50, in addition to the first gasinlet 26, the gas outlet 35, and the discharge path cover 36. Theprotection cover 50 is a protection cover to protect an RF deliveryplate 52.

FIGS. 16 and 17 illustrate that the protection cover 50 is removed.Referring to FIGS. 16 and 17, the RF delivery plate 52 is connected tothe RF distribution plate 39. The RF distribution plate 39 iselectrically connected to a plurality of RF rods 54. In an embodiment,for the uniform supply of RF power, the RF rods 54 may be symmetricallyarranged with respect to the center of the gas channel 21, for example,the center of the first gas inlet 26.

An upper portion of the RF delivery plate 52 may be connected to an RFgenerator (not shown). A lower portion of the RF delivery plate 52 maybe connected to the RF distribution plate 39. The RF distribution plate39 may be connected to the RF rods 54.

Accordingly, the RF power generated by the RF generator is delivered tothe gas channel 21 via the RF delivery plate 52, the RF distributionplate 39, and the RF rods 54. The gas channel 21 is mechanicallyconnected to the gas supply plate 22, and the gas channel 21 and the gassupply plate 22 altogether may serve as RF electrodes.

At least one of the RF rods 54 may be installed in the reactor. The RFrods 54 may be arranged to penetrate through a portion of the firstpartition 5 of FIG. 12 arranged between the second partition 6 of FIG.12 and the third partition 7 of FIG. 12. In an additional embodiment, asillustrated in FIG. 17, at least two of the RF rods 54 may be arranged,and the RF rods 54 may be symmetrically arranged with respect to thecenter of the reactor. The symmetric arrangement may enable the RF powerto be uniformly supplied to the RF electrodes 21 and 22.

In some embodiments, a cartridge heater (not shown) may be installedabove the reactor wall 2 to heat the reactor wall. A plurality ofcartridge heaters may be symmetrically arranged, and thus a uniformtemperature gradation of the reactor wall 2 may be achieved.

FIGS. 18 and 19 schematically illustrate structures of reactorsaccording to other embodiments. The reactors according to the presentembodiments may be a perspective view (FIG. 18) and a bottom view (FIG.19) of the back plate 20 according to the above-described embodiments.

Referring to FIGS. 18 and 19, the second partition 6 may be arrangedspaced apart a certain distance from the center of the upper space ofthe reactor wall 2. The third partition 7 may be arranged between thesidewall of the reactor wall 2 and the second partition 6. The gassupply channel 28 of FIG. 12 extending from the upper space to the lowerspace may be provided by the structure of the second partition 6.

The fourth partition 19 may contact an upper surface of the back plate20 of FIG. 12 to support the back plate 20.

The coupling member 40 and the support member 41 may be inserted in ascrew hole 56. Accordingly, the gas channel 21 of FIG. 12 and the backplate 20 of FIG. 12 may be mechanically connected to the first partition5 of FIG. 12.

The RF rods 54 are inserted in a plurality of RF rod holes 58 andelectrically connected to the gas channel 21.

A discharge path is formed in the fifth region 14, and the firstdischarge hole 33 and the second discharge hole 45 may be respectivelyconnected to the first discharge channel 34 of FIG. 14 and the seconddischarge channel 46 of FIG. 14, forming a discharge portion.

The width of the first through-hole 9 may gradually increase toward thesixth region 17 of FIG. 12. The space of the sixth region 17 may befilled with the external air and may serve as an insulating body duringthe plasma process. Accordingly, the generation of parasitic plasma inthe space formed by the first through-hole 9 may be prevented.

FIGS. 20 and 21 schematically illustrate structures of the back plates20 according to other embodiments. The back plates, according to thepresent embodiments may be a perspective view (FIG. 20) and a bottomview (FIG. 21) of the back plate 20 according to the above-describedembodiments.

The back plate 20 is located between the first partition 5 of FIG. 12and the gas channel 21 of FIG. 12. Furthermore, the back plate 20 formedof an insulating body may serve as an insulator to isolate the firstpartition 5 of FIG. 12 from the gas channel 21 and the gas supply plate22, which are the RF electrodes, during the plasma process.

The fourth through-holes 11 may be plurally formed spaced apart acertain distance from the center of the back plate 20 in upper/lowersurface of the back plate 20. The fourth through-holes 11 may receive agas from the second through-hole 10 of FIG. 12 and supply the gas to thefifth through-hole 12 of FIG. 12 penetrating through the gas channel 21of FIG. 12. The third through-hole 23 is located at a center portion ofthe back plate 20, and the flange 27 of FIG. 12 is inserted in the thirdthrough-hole 23.

FIGS. 22 to 24 are, respectively, a perspective view, a top view, and abottom view of the gas channel 21 included in the gas supply unit,according to an embodiment.

The gas channel 21 may include a plurality of fifth through-holes 12arranged spaced apart a certain distance from the center portion of thegas channel 21.

Referring to FIG. 23, the positions of the fifth through-holes 12 in theupper surface of the gas channel 21 may correspond to the positions ofthe fourth through-holes 11 of the back plate 20 illustrated in FIGS. 20and 21.

The fifth through-holes 12 formed in the gas channel 21 may penetratethrough the gas channel 21 in a perpendicular direction or in aninclined direction.

For example, referring to FIG. 23, the fifth through-holes 12 may bearranged or formed along a first circumference having a first diameter don a first surface of the gas channel 21. Furthermore, referring to FIG.24, the fifth through-holes 12 may be arranged or formed along a secondcircumference having a second diameter d′ on a second surface of the gaschannel 21. In an example, the first diameter d may be greater than thesecond diameter d′. However, the present inventive concept is notlimited thereto, and it may be that d=d′ or d≠d′.

FIG. 25 illustrate various embodiments of the fourth through-hole 11 andthe fifth through-hole 12 penetrating through the back plate 20 and thegas channel 21.

As illustrated in FIG. 25, the fifth through-hole 12 penetrating throughthe gas channel 21 may penetrate through the gas supply plate 22 in aperpendicular direction or an inclined direction. When the fifththrough-hole 12 penetrates through the gas supply plate 22 in aninclined direction, the fifth through-hole 12 may lead toward the insideof the gas flow channel 24 or the outside thereof. Although it is notillustrated, the fourth through-hole 11 is not limited to the shape thatextends vertically.

FIG. 26 illustrates that the second through-hole 10, the fourththrough-hole 11, and the fifth through-hole 12 penetrate through thethird partition 7, the first partition 5, the back plate 20, and the gaschannel 21, according to another embodiment.

As illustrated in FIG. 26, each of the second gas inlet 31, the secondthrough-hole 10, the buffer space 38, the fourth through-hole 11, andthe fifth through-hole 12 is plurally provided and a plurality of gasesare supplied to the gas flow channel 24 via the second gas inlets 31.For example, the source gas, the reactive gas, and the purge gas may besupplied through the respective inlets.

The gas supplied to the gas flow channel 24 via the second through-hole10, the fourth through-hole 11, and the fifth through-hole 12 may besupplied to an edge region of the reaction space 18 via an edge portionunder the gas supply plate 22, or to a region between the center portionand the edge portion of the reaction space 18. As a result, theuniformity or characteristics of a film formed in an edge region (edgeportion) of the substrate to be processed or in a specific peripheralportion between the center portion and the edge region of the substratemay be selectively controlled.

For example, the uniformity of a film deposited in the edge region ofthe substrate or in a region between the center portion and the edgeportion of the substrate may be selectively controlled according to aflow rate of the gas supplied through the second, fourth, and fifththrough-holes 10, 11, and 12, and a degree of inclination of the fifththrough-hole 12 penetrating through the gas channel 21. Furthermore, dueto these factors, a uniformity deviation from a film deposited at thecenter portion of the substrate may be reduced or controlled.

For example, a film having a minimum uniformity deviation between thecenter portion and the edge portion of the substrate may be deposited.In another example, a film having a concave shape, in which the edgeportion of the substrate is thicker than the center portion thereof, maybe deposited, or a film having a convex shape, in which the centerportion of the substrate is thicker than the edge portion thereof, maybe deposited. The gas supplied through the second through-hole 10, thefourth through-hole 11, and the fifth through-hole 12 may be an inertgas. In some embodiments, the gas may be the reactive gas and/or thesource gas participating in the formation of a film.

FIGS. 27 and 28 are graphs showing a thickness of a SiO₂ film depositedon a substrate by a plasma-enhanced atomic layer deposition (PEALD)method in a reactor according to an embodiment. The graphs show theeffect of the gas supplied through the second through-hole 10, thefourth through-hole 11, and the fifth through-hole 12 on the uniformityof a film, in particular, the uniformity of a film deposited at the edgeportion of the substrate.

The horizontal axis of the graphs denotes a distance of 150 mm to theleft and right from the center of the wafer when the diameter of thesubstrate is 300 mm. The vertical axis of the graphs denotes thethickness of a film. In the present embodiment, the effect is evaluatedby setting the angle of the fifth through-hole 12 penetrating throughthe gas channel 21 to 30° and varying a gas flow rate.

TABLE 1 1st through-hole Source 2nd thru-hole carrier Ar Purge Ar O2Edge gas RF (sccm) (sccm) (sccm) (sccm) power(W) Pressure(Torr) 10003500 200 Ar 0~1000 400 2 1000 3500 200 O2 0~500 400 2

As shown in Table 1, through the first through-hole (main hole) that isthe gas supply channel, Ar of 1000 sccm was supplied as a source carrierand Ar of 3500 sccm was supplied as a purge gas, and O2 of 200 sccm maybe supplied as a reactive gas continuously for an entire process period(Accordingly, a total flow rate is 4,700 sccm). Plasma of 400 watt wassupplied and a pressure of 2 torr was maintained in a reaction spaceduring the process.

Oxygen was activated only when plasma is supplied and reacted withsource molecules on the substrate. Accordingly, the oxygen serves as apurge gas when plasma is not supplied. Accordingly, oxygen may serve asa reactive purge gas in the present process.

The gas supplied through the second through-hole may be Ar or O2. Thegas may be continuously supplied for the entire process period. The flowrate of the gas may be appropriately controlled according to a desiredfilm uniformity around the substrate.

The inventive concept according to the above-described embodiments canbe summarized as follows.

-   -   First operation of continuously supplying a source gas, a purge        gas, and a reactive purge gas through a first through-hole    -   Second operation of continuously supplying at least one of the        purge gas and the reactive purge gas through a second        through-hole    -   Third operation of applying plasma    -   The first operation and the second operation may be        simultaneously performed, whereas the third operation may be        temporarily performed while the first operation and the second        operation are performed.

The first through-hole corresponds to the gas supply channel 28 of FIG.12, and the second through-hole corresponds to the through-holes 10, 11,and 12 of FIG. 12 penetrating through at least part of the gas supplyunit.

As illustrated in FIG. 27, it may be seen that, as the flow rate of theAr gas supplied through the second through-hole increases, the thicknessof the film deposited at the edge portion of the substrate decreases.Also, as illustrated in FIG. 28, it may be seen that, as the flow rateof the oxygen gas supplied through the second through-hole increases,the thickness of the film deposited at the edge portion of the substrateincreases. In other words, by inducing and controlling a blocking effecton a peripheral portion of the substrate with respect to the source gasand the reactive gas supplied to a peripheral portion of the reactionspace, uniformity of a film on the substrate may be controlled.

The embodiment of the present inventive concept may not be construed tobe limited to a particular shape of a part described in the presentspecification and may include a change in the shape generated duringmanufacturing, for example.

It should be understood that embodiments described herein should beconsidered in a descriptive sense only and not for purposes oflimitation. Descriptions of features or aspects within each embodimentshould typically be considered as available for other similar featuresor aspects in other embodiments.

While one or more embodiments have been described with reference to thefigures, it will be understood by those of ordinary skill in the artthat various changes in form and details may be made therein withoutdeparting from the spirit and scope as defined by the following claims.

What is claimed is:
 1. A substrate processing apparatus comprising: apartition comprising at least one through-hole; a conduit arranged inthe partition through the through-hole; a gas supply unit connected tothe conduit; and a low dielectric material provided between a side wallof the through-hole and the conduit.
 2. The substrate processingapparatus of claim 1, wherein the low dielectric material comprises air.3. The substrate processing apparatus of claim 2, wherein at least onepath for connecting the air and outside is formed in the substrateprocessing apparatus.
 4. The substrate processing apparatus of claim 3,wherein the path is formed between the partition and the conduit.
 5. Thesubstrate processing apparatus of claim 3, wherein the path is formed inthe partition.
 6. The substrate processing apparatus of claim 1, whereinthe partition comprises a protrusion protruding toward the gas supplyunit, and the low dielectric material contacts one side surface of theprotrusion.
 7. The substrate processing apparatus of claim 1, whereinthe partition comprises a step portion located in an area where thethrough-hole is formed, the conduit comprises a flange, and the conduitis connected to the partition through a coupling between the flange andthe step portion.
 8. The substrate processing apparatus of claim 7,wherein a path communicated with outside air is formed between the stepportion and the flange.
 9. The substrate processing apparatus of claim1, further comprising an insulating plate arranged between the partitionand the gas supply unit.
 10. The substrate processing apparatus of claim9, further comprising a radio frequency (RF) rod connected to the gassupply unit by penetrating through at least part of the partition andthe insulating plate.
 11. The substrate processing apparatus of claim 1,wherein the through-hole has a first diameter in a first region and asecond diameter greater than the first diameter in a lower portion ofthe first region.
 12. The substrate processing apparatus of claim 11,wherein a diameter of at least part of the through-hole continuouslyincreases toward the gas supply unit.
 13. The substrate processingapparatus of claim 12, wherein a side section profile of at least partof the through-hole has a bell-like shape.
 14. A substrate processingapparatus comprising: a partition comprising at least one through-hole;an insulating conduit arranged in the partition through thethrough-hole; a gas supply unit connected to the insulating conduit; aninsulating plate arranged between the partition and the gas supply unit;and a radio frequency (RF) rod connected to the gas supply unit bypenetrating through the insulating plate, wherein the partitioncomprises: at least one of first protrusion contacting the insulatingplate; and at least one of second protrusion contacting the insulatingplate and arranged between the first protrusion and the insulatingconduit, the RF rod is arranged between the first protrusion and thesecond protrusion, and an air-filled-space is formed between thepartition and the insulating plate, between a side wall of thethrough-hole and the insulating conduit, and between the firstprotrusion and the second protrusion.
 15. A substrate processingapparatus comprising: a partition providing a gas supply channel; a gassupply unit connected to the gas supply channel; and air between thepartition and the gas supply unit, wherein the partition comprises atleast one first protrusion protruding toward the gas supply unit, andthe air contacts one side surface of the first protrusion.
 16. Thesubstrate processing apparatus of claim 15, wherein the first protrusionis arranged in an area overlapping the gas supply unit.
 17. Thesubstrate processing apparatus of claim 15, wherein at least part of thefirst protrusion is arranged in an area that does not overlap the gassupply unit.
 18. The substrate processing apparatus of claim 17, whereinthe partition further comprises at least one second protrusionprotruding toward the gas supply unit and arranged between the firstprotrusion and the gas supply channel, and the air is provided betweenthe first protrusion and the second protrusion and between the gassupply channel and the second protrusion.
 19. The substrate processingapparatus of claim 18, further comprising a radio frequency (RF) rodconnected to the gas supply unit and arranged between the firstprotrusion and the second protrusion.
 20. The substrate processingapparatus of claim 17, further comprising moisture absorbing memberarranged to contact the air.